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| HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S March 1997 6A, 400V and 500V N-Channel IGBTs Packages HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features * 6A, 400V and 500V * VCE(ON): 2.5V Max. * TFALL: 1.0s * Low On-State Voltage * Fast Switching Speeds * High Input Impedance Applications * Power Supplies * Motor Drives * Protective Circuits HGTD6N40E1S, HGTD6N50E1S JEDEC TO-252AA COLLECTOR (FLANGE) GATE EMITTER Description The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and HGTD6N50E1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits. PACKAGING AVAILABILITY PART NUMBER HGTD6N40E1 HGTD6N50E1 HGTD6N40E1S HGTD6N50E1S PACKAGE TO-251AA TO-251AA TO-252AA TO-252AA BRAND G6N40E G6N50E G6N40E G6N50E E G Terminal Diagram N-CHANNEL ENHANCEMENT MODE C NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTD6N40E1 HGTD6N40E1S 400 400 20 7.5 6.0 60 0.48 -55 to +150 HGTD6N50E1 HGTD6N50E1S 500 500 20 7.5 6.0 60 0.48 -55 to +150 UNITS V V V A A W W/oC oC Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES Collector-Gate Voltage RGE = 1M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC90 Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG INTERSIL CORPORATION'S PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 File Number 2413.4 1970 Specifications HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS HGTD6N40E1 HGTD6N40E1S PARAMETERS Collector-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Collector-Emitter On-Voltage SYMBOL BVCES VGE(TH) ICES TEST CONDITIONS IC = 250A, VGE = 0V VGE = VCE, IC = 1mA TJ = TJ = IGES VCE(ON) +150oC, +150oC, VCE = 400V VCE = 500V MIN 400 2.0 MAX 4.5 250 100 2.9 2.5 2.5 2.4 6.5 (Typ) 6.9 (Typ) 90 (Typ) 32 (Typ) 24 (Typ) 1100 (Typ) 0.29 (Typ) HGTD6N50E1 HGTD6N50E1S MIN 500 2.0 MAX 4.5 250 100 2.9 2.5 2.5 2.4 UNITS V V A A nA V V V V V nC ns ns ns ns mJ VGE = 20V, VCE = 0V TJ = +150oC, IC = 3A, VGE = 10V TJ = TJ = TJ = +150oC, +25oC, +25oC, IC = 3A, VGE = 15V IC = 3A, VGE = 10V IC = 3A, VGE = 15V Gate-Emitter Plateau Voltage On-State Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Energy Loss Per Cycle (Off Switching Dissipation = WOFF x Frequency) Turn-Off Delay Time Fall Time Turn-Off Energy Loss Per Cycle (Off Switching Dissipation = WOFF x Frequency) Thermal Resistance Junction-toCase (IGBT) VGEP QG(ON) tD(ON) tR tD(OFF) tF WOFF IC = 3A, VCE = 10V IC = 3A, VCE = 10V Resistive Load, IC = 3A, VCE = 400V, RL = 133, TJ = +150oC, VGE = 10V, RG = 25 tD(OFF)I tFI WOFF Inductive Load (See Figure 11), IC = 3A, VCE(CLP) = 400V, RL = 133, L = 50H, TJ = +150oC, VGE = 10V, RG = 25 - 190 1 0.43 - 190 1 0.43 ns s mJ RJC - 2.08 - 2.08 oC/W Typical Performance Curves ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) 7.5 PULSE TEST, VCE = 10V 6.0 PULSE DURATION = 250s DUTY CYCLE < 2% 7.5 VGE = 15V 6.0 PULSE DURATION = 250s DUTY CYCLE < 0.5%, TC = +25oC VGE = 10V VGE = 7.5V VGE = 7.0V VGE = 6.5V 3.0 VGE = 6.0V 1.5 VGE = 5.5V VGE = 5.0V 0.0 0 2 4 6 8 10 0 VGE, GATE-TO-EMITTER VOLTAGE (V) 2 4 6 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 10 4.5 4.5 3.0 +150oC TC = -55oC 1.5 TC = TC = +25oC 0.0 FIGURE 1. TYPICAL TRANSFER CHARACTERISTICS FIGURE 2. TYPICAL SATURATION CHARACTERISTICS 1971 HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S Typical Performance Curves (Continued) 5 VCE(ON), SATURATION VOLTAGE (V) ICE, DC COLLECTOR CURRENT (A) TJ = +150oC 4 VGE = 10V 12 10 VGE = 15V 8 3 VGE = 15V 2 6 VGE = 10V 4 1 2 0 1 ICE, COLLECTOR-EMITTER CURRENT (A) 10 0 +25 +50 +75 +100 +125 +150 TC, CASE TEMPERATURE (oC) FIGURE 3. SATURATION VOLTAGE vs COLLECTOR-EMITTER CURRENT (TYPICAL) FIGURE 4. DC COLLECTOR CURRENT vs CASE TEMPERATURE 500 f = 1MHz 400 tD(OFF)I , TURN-OFF DELAY (s) 0.3 TJ +150oC, VGE = 15V, RG = 50, VCE = 400V, L = 50H C, CAPACITANCE (pF) 0.2 300 200 COSS CISS 0.1 100 CRSS 0 0 5 0.0 10 15 20 25 1 ICE, COLLECTOR-EMITTER CURRENT (A) 10 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 5. CAPACITANCE vs COLLECTOR-TO-EMITTER VOLTAGE (TYPICAL) FIGURE 6. TURN-OFF DELAY vs COLLECTOR-TO-EMITTER CURRENT (TYPICAL) 1.5 WOFF , TURN-OFF SWITCHING LOSS (mJ) TJ = +150oC, VGE = 10V RG = 25, L = 50H tFI , FALL TIME (s) 10 TJ = +150oC, VGE = 10V RG = 25, L = 50H 1.0 VCE = 400V VCE = 400V 1.0 0.5 VCE = 200V 0.0 1 ICE, COLLECTOR-EMITTER CURRENT (A) 10 0.1 1 ICE, COLLECTOR-EMITTER CURRENT (A) 10 FIGURE 7. FALL TIME vs COLLECTOR-TO-EMITTER CURRENT (TYPICAL) FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOREMITTER CURRENT (TYPICAL) 1972 HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S Typical Performance Curves (Continued) fOP , MAXIMUM OPERATING FREQUENCY (kHz) TJ = +150oC, TC = +100oC, VGE = 10V RG = 25, PT = 60W, L = 50H VCE, COLLECTOR-EMITTER VOLTAGE (V) 1000 500 GATEEMITTER VOLTAGE VCC = BVCES RL = 166.7 IG(REF) = 0.18mA VGE = 10V VCC = BVCES 10 VGE, GATE-EMITTER VOLTAGE (V) 375 100 VCE = 200V VCE = 400V 250 0.75 BVCES 0.75 BVCES 0.50 BVCES 0.50 BVCES 0.25 BVCES 0.25 BVCES COLLECTOR-EMITTER VOLTAGE 5 10 fMAX = (PD - PC)/WOFF PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION 1 1 ICE, COLLECTOR-EMITTER CURRENT (A) 10 125 0 20 0 IG(REF) IG(ACT) TIME (s) 80 IG(REF) IG(ACT) FIGURE 9. MAXIMUM OPERATING FREQUENCY vs COLLECTOR CURRENT AND VOLTAGE (TYPICAL) FIGURE 10. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT Test Circuit RL L = 50H 1/RG = 1/RGEN + 1/RGE RGEN = 50 VCC 400V + - 20V 0V RGE = 50 FIGURE 11. INDUCTIVE SWITCHING TEST CIRCUIT All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 1973 |
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